No.35 Calcination of SiC silicon carbide

[ Problem Point ]

There were no sources of heat which  can easily heat SiC silicon carbide.

[ ⇒Kaizen Point ]

SiC silicon carbide was heated using the Halogen Point Heater.
As it became the high temperature in a short time, the experimental speed went up.

Related page:

No.4 Joint of thermoplastic resin tubes No.5 Dryness of the silicon wafer No.15 Calcination of carbon nanotubes No.3 Burning in low oxygen density environment No.8 Dryness of print No.13 Forming of the multilayer polymer film No.14 Plastic resin welding No.26 Metal analysis of incineration waste