No.16 Annealing Process of SiC Wafers

[ Problem Point ]

The annealing process of SiC wafers requires uniform heating at high temperatures, while improving throughput remains a challenge.

[ ⇒Kaizen Point ]

By using the Carbon line heater, heating efficiency has improved.
Throughput has increased, and the compact design contributes to space-saving.
Furthermore, energy efficiency in high-temperature processes has also been enhanced.